Novel hard-mask materials for future semiconductor manufacturing

Novel hard-mask materials for future semiconductor manufacturing
Rapid prototyping of etch test structures for hard mask development using electron beam lithography
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Abstract:
Semiconductor manufacturing depends on the development of new processes, advanced patterning, and novel materials to create smaller and higher performing devices to follow the industry roadmaps for applications for computing and systems (such as smartphones and servers).
For Dynamic Random Access Memory (DRAM) applications, more innovation is needed to sustain the high aspect ratios required in the capacitor’s architecture – whether it is moving towards 3D architectures or developing new materials to sustain the challenge of scaling.
To accelerate the learning, it is essential to screen novel hard mask (HM) materials in a rapid fashion to speed their development.
The primary goal of this work is to create a path for rapidly screening of HM materials which are still under early phase development, and which are prepared in small chamber tools (coupon chambers) and therefore not ready for 300 mm process integration.
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Bio:
Luisa Bozano:
Director of Patterning Engineering, Applied Materials
Her interests at the interface of physics, material science and chemistry led her to pursue advanced studies at UC Santa Cruz after receiving her Laurea degree in Physics from the University of Genoa in her native Italy.
While receiving her doctorate, she joined IBM Almaden Research.
Her work at IBM ranged from the application of metal oxides and polymers to sensors and electronics, to development of resist materials and e-beam methods for improved optical mask lithography. Her leadership in these spaces yielded over 30 issued patents, and as impressively, successful transfer and commercialization of patterning materials to external collaborators.
Luisa now leads Applied Materials' interests in advanced patterning, from e-beam to packaging, as Director of Patterning Engineering.
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