Achieving efficient p-type doping in gallium nitride (GaN) and its alloys remains one of the most critical challenges in realizing the full potential of III-nitride semiconductors for high-power electronics, deep-ultraviolet (DUV) optoelectronics, and quantum information technologies. While magnesium is the conventional acceptor dopant, its high ionization energy (≈0.22 eV in GaN and up to 0.6 […]